symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 17 25 55 60 r q jc 2.3 3 w t a =70c 1.3 power dissipation a t a =25c p dsm 2.1 repetitive avalanche energy l=0.3mh c 33 a mj junction and storage temperature range a p d c 50 25 -55 to 175 t c =100c avalanche current c 15 i d 25 20 80 pulsed drain current c power dissipation b t c =25c continuous drain current g maximum units parameter t c =25c t c =100c absolute maximum ratings t a =25c unless otherwise noted v v 20 gate-source voltage drain-source voltage 30 c/w maximum junction-to-ambient a steady-state c/w w maximum junction-to-case b steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r q ja AOD484 30v n-channel mosfet v ds (v) = 30v i d = 25 a (v gs = 10v) r ds(on) < 15 m w (v gs = 10v) r ds(on) < 23 m w (v gs = 4.5v) the AOD484 uses advanced trench technology and design to provide excellent r ds(on) with low gate charge. this device is suitable for use in pwm, loa d switching and general purpose applications. g d s www.freescale.net.cn 1/6 general description features
symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1 1.5 2.5 v i d(on) 80 a 12.1 15 t j =125c 19 18.5 23 m w g fs 26 s v sd 0.71 1 v i s 21 a c iss 938 1220 pf c oss 142 pf c rss 99 pf r g 1.2 1.8 w q g (10v) 17.5 21 nc q g (4.5v) 8.4 nc q gs 3 nc q gd 4.1 nc t d(on) 5 ns t r 12 ns t d(off) 19 ns t f 6 ns t rr 19 21 ns q rr 10 12 nc 25 25 60 30 2.5 1.6 body diode reverse recovery charge i f =20a, di/dt=100a/ m s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =0.75 w , r gen =3 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =15v, i d =20a gate source charge gate drain charge total gate charge m w v gs =4.5v, i d =15a i s =1a, v gs =0v v ds =5v, i d =20a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss m a gate threshold voltage v ds =v gs , i d =250 m a v ds =24v, v gs =0v v ds =0v, v gs =20v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time drain-source breakdown voltage on state drain current i d =250ua, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a reverse transfer capacitance i f =20a, di/dt=100a/ m s v gs =0v, v ds =15v, f=1mhz switching parameters a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 15 0c. the value in any given application depends on the user's specific board design, and the maximu m temperature of 175c may be used if the pcb allow s it. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c: repetitive rating, pulse width limited by juncti on temperature t j(max) =175c. d. the r q ja is the sum of the thermal impedence from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175c. g. the maximum current is limited by package. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a stil l air environment with t a =25c. the soa curve provides a single pulse rating. *this device is guaranteed green after data code 8x 11 (sep 1 st 2008). rev5: aug. 2009 www.freescale.net.cn 2/6 AOD484 30v n-channel mosfet
typical electrical and thermal characteristics 500 150 60 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3 3.5 v gs (volts) figure 2: transfer characteristics i d (a) -40c 0 5 10 15 20 25 0 4 8 12 16 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w w w w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c -40c 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =4.5v i d =15a v gs =10v i d =20a 10 15 20 25 30 35 40 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w w w w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =20a 25c 125c 0 10 20 30 40 50 60 70 80 0 1 2 3 4 5 v ds (volts) figure 1: on-region characteristics i d (a) v gs =3v 8v 10v 4.5v 6v 3.5v www.freescale.net.cn 3/6 AOD484 30v n-channel mosfet
typical electrical and thermal characteristics 500 150 60 0 2 4 6 8 10 0 5 10 15 20 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) z q q q q jc normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 1000.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 100 m s 10ms 1ms dc r ds(on) limited t j(max) =175c, t c =25c v ds =20v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =3c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175c t c =25c 10 m s www.freescale.net.cn 4/6 AOD484 30v n-channel mosfet
typical electrical and thermal characteristics 500 150 60 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) z q q q q ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =60c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 5 10 15 20 25 30 35 40 0.000001 0.00001 0.0001 0.001 time in avalanche, t a (s) figure 12: single pulse avalanche capability i d (a), peak avalanche current 0 10 20 30 40 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note b) power dissipation (w) 0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note b) current rating i d (a) dd d a v bv i l t - = t a =150c 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) t a =25c t a =25c www.freescale.net.cn 5/6 AOD484 30v n-channel mosfet
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f di/dt i rm rr vdd vdd q = - idt t rr - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms vds ar dss 2 e = 1/2 li ar ar www.freescale.net.cn 6/6 AOD484 30v n-channel mosfet
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